Band alignment at the hybrid heterojunction between S-passivated III-V semiconductors and C60

被引：9

作者：

Helander, M. G. ^{[1
]}

Greiner, M. T. ^{[1
]}

Wang, Z. B. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Fermi level; fullerenes; gallium arsenide; III-V semiconductors; indium compounds; interface states; passivation; semiconductor heterojunctions; sulphur; surface states; ultraviolet photoelectron spectra; METAL-SEMICONDUCTOR; LEVEL ALIGNMENT; SURFACE;

D O I：

10.1063/1.3213367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface between C-60 and several commonly used S-passivated III-V semiconductors was studied using x-ray and ultraviolet photoelectron spectroscopy. It is found that the band alignment for S-passivated III-V semiconductors used in real devices differs significantly from that of in situ-prepared surfaces previously reported. The energy-level alignment is found to be nearly identical for the different III-V semiconductors. This phenomenon is explained by Fermi level pinning, which is consistent with interface dipole theory from traditional semiconductor device physics.

引用

页数：3

共 29 条

[1] Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector [J].

Ban, D. ;

Han, S. ;

Lu, Z. H. ;

Oogarah, T. ;

SpringThorpe, A. J. ;

Liu, H. C. .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[2] Organic-inorganic hybrid optical upconverter [J].

Ban, Dayan ;

Han, S. ;

Lu, Z. H. ;

Oogarah, T. ;

SpringThorpe, A. J. ;

Liu, H. C. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) :1645-1650

[3] Early stages of interface formation of C60 on GaAs(100) [J].

Brambilla, A. ;

Sessi, P. ;

Duo, L. ;

Finazzi, M. ;

Cabanillas-Gonzalez, J. ;

Egelhaaf, H.-J. ;

Lanzani, G. ;

Ciccacci, F. .

SURFACE SCIENCE, 2007, 601 (18) :4078-4081

[4] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[5] Low-temperature STM on InAs(110) accumulation surfaces [J].

Canali, L ;

Wildoer, JWG ;

Kerkhof, O ;

Kouwenhoven, LP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S113-S116

[6] Photoemission study of chemisorption of C60 on InP(100) -: art. no. 235331 [J].

Chao, Y ;

Svensson, K ;

Radosavkic, D ;

Dhanak, VR ;

Siller, L ;

Hunt, MRC .

PHYSICAL REVIEW B, 2001, 64 (23) :2353311-2353316

[7] Near-infrared optical upconverter based on i-In0.53Ga0.47As/C60 photovoltaic heterojunction [J].

Chen, J. ;

Ban, D. ;

Helander, M. G. ;

Lu, Z. ;

Graf, M. ;

SpringThorpe, A. J. ;

Liu, H. C. .

ELECTRONICS LETTERS, 2009, 45 (14) :753-754

[8] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[9] Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment [J].

Driad, R ;

Lu, ZH ;

Charbonneau, S ;

McKinnon, WR ;

Laframboise, S ;

Poole, PJ ;

McAlister, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :665-667

[10] Angle-dependent ultraviolet photoelectron spectroscopy of sputter cleaned polycrystalline noble metals [J].

Helander, M. G. ;

Greiner, M. T. ;

Wang, Z. B. ;

Lu, Z. H. .

APPLIED SURFACE SCIENCE, 2009, 255 (23) :9553-9556

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