Improved performance and reliability of N2O-grown oxynitride on 6H-SiC

被引：42

作者：

Xu, JP ^{[1
]}

Lai, PT

Chan, CL

Li, B

Cheng, YC

机构：

[1] Huazhong Univ Sci & Technol, Dept Solid State Elect, Wuhan 430074, Peoples R China

[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 06期

关键词：

hot-carrier stress; MOS devices; MOSFETs; nitridation; SiC;

D O I：

10.1109/55.843156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports, for the first time, Na2O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the Np O-grown technique leads to not only greatly improved SiC/SiO2 interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N2O-nitrided and conventional thermally-oxidized devices. These improvements are especially obvious for p-type SiC MOS device, indicating that N2O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFET's.

引用

页码：298 / 300

页数：3

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