Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

被引：100

作者：

Milojevic, M. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Aguirre-Tostado, F. S. ^{[1
]}

Kim, H. C. ^{[1
]}

Vogel, E. M. ^{[1
]}

Kim, J. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 25期

关键词：

alumina; atomic layer deposition; gallium arsenide; III-V semiconductors; insulating thin films; organic compounds; passivation; surface chemistry;

D O I：

10.1063/1.3054348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Half-cycle atomic layer deposition reactions of trimethyl aluminum (TMA) and water on GaAs exposed to wet chemical sulfur treatments are studied for the formation of Al2O3. Trivalent oxides of gallium and arsenic are completely reduced following the first TMA pulse. The same processing step also removes As-S bonding below the level of detection, while the relative concentration of gallium suboxides as well as Ga-S bonds is not affected. A concomitant decrease in the S 2p peak intensity is observed, indicating that sulfur is lost through a volatile reaction product. Further precursor exposures do not measurably affect substrate surface chemistry.

引用

页数：3

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