Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode

被引：12

作者：

Bulashevich, KA

Evstratov, IY

Nabokov, VN

Karpov, SY

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Soft Impact Ltd, St Petersburg 194156, Russia

[3] Semicond Technol Res Inc, Richmond, VA 23255 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2140873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using simulations, we have examined specific features of a hybrid n-ZnO/p-AlGaN light-emitting diode (LED) operation, originated from a type-II band alignment and a negative polarization charge at the ZnO/AlGaN interface. These factors are found to improve the carrier confinement near the interface and to affect significantly the light emission spectra and internal quantum efficiency of the LED. The theoretical predictions are compared with available observations. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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