Domain structure in chemically ordered InxGa1-xN alloys grown by molecular beam epitaxy

被引：45

作者：

Doppalapudi, D ^{[1
]}

Basu, SN

Moustakas, TD

机构：

[1] Boston Univ, Dept Mfg Engn, Boston, MA 02215 USA

[2] Boston Univ, Dept Elect Engn, Boston, MA 02215 USA

[3] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.369250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Observation of long range atomic ordering in InGaN films grown by molecular beam epitaxy on A-plane sapphire is reported, based on x-ray diffraction and transmission electron microscopy studies. The InGaN films have a domain structure, with alternating domains of ordered and disordered phases, close to the film/substrate interface. Closer to the film surface, disordered domains are no longer observed. The degree of ordering was found to increase with growth rate (at the low growth rates used in these materials), which is consistent with ordering being a surface phenomenon. (C) 1999 American Institute of Physics. [S0021-8979(99)04902-6].

引用

页码：883 / 886

页数：4

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