A proposed single grain-boundary thin-film transistor

被引：48

作者：

Oh, CH ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528550, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 01期

关键词：

excimer-laser crystallization; grain; grain-boundary; lateral growth; phase-shift method; polycrystalline silicon; thin-film transistor;

D O I：

10.1109/55.892431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity, The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500 degreesC, had the on-off current ratio congruent to 10(6), the field-effect mobility congruent to 330 cm(2)/Vs and the subthreshold swing congruent to 1.1 V/dec, respectively, For the device processed at 800 degreesC, they are >10(6), >450 cm(2)/Vs and congruent to 0.51 V/dec, respectively.

引用

页码：20 / 22

页数：3

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