Properties of RF magnetron sputtered zinc oxide thin films

被引：117

作者：

Ondo-Ndong, R ^{[1
]}

Ferblantier, G ^{[1
]}

Al Kalfioui, M ^{[1
]}

Boyer, A ^{[1
]}

Foucaran, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Electron & Microoptoelectron, CNRS, UMR 5507, F-34095 Montpellier 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 255卷 / 1-2期

关键词：

atomic force microscopy; X-ray diffraction; RF sputtering magnetron; piezoelectric materials; ZnO;

D O I：

10.1016/S0022-0248(03)01243-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO thin films were deposited on silicon substrate by RF magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of oxygen concentration and the RF power on the. films structural properties. They exhibited a c-axis orientation of below 0.32degrees FWHM of X-ray rocking curves, an extremely high resistivity of 10(12) Omega cm and an energy gap of 3.3 eV at room temperature. It was found that a RIF power of 50 W, target to substrate distance 70 mm, very low gas pressures of 3.35 x 10(-3) Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 135

页数：6

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