Nitrogenated amorphous InGaZnO thin film transistor

被引：86

作者：

Liu, Po-Tsun ^{[1
,2
]}

Chou, Yi-Teh ^{[1
,3
]}

Teng, Li-Feng ^{[1
,3
]}

Li, Fu-Hai ^{[1
,3
]}

Shieh, Han-Ping ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 05期

关键词：

D O I：

10.1063/1.3551537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO: N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO: N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551537]

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页数：3

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