High-speed GaAs epitaxial lift-off and bonding with high alignment accuracy using a sapphire plate

被引：26

作者：

Sasaki, Y ^{[1
]}

Katayama, T

Koishi, T

Shibahara, K

Yokoyama, S

Miyazaki, S

Hirose, M

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 02期

关键词：

D O I：

10.1149/1.1391668

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report more than one order of magnitude (similar to 18 times) enhancement in the AlAs etching rate in a GaAs epitaxial lift-off technique compared with that at 0 degrees C reported previously. This has been achieved by optimizing various physical parameters such as pressure and temperature, and by adding a surfactant and antifoaming agent to the HF solution. The sapphire plate on which the sample is adhered is useful id further processing. Thus, lifted-off GaAs/AlGaAs double heterostructures exhibit good luminescence characteristics compared to the as-grown samples. (C) 1999 The Electrochemical Society S0013-4651(98)03-028-6. All rights reserved.

引用

页码：710 / 712

页数：3

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