Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing

被引：15

作者：

Chen, DR ^{[1
]}

Luo, JS

Lin, WT

Chang, CY

Shih, PS

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.122161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1-0.4 J/cm(2), a continuous germanosilicide layer composed of a low-temperature phase, Pd-2(Si1-xGex), and a high-temperature phase, Pd(Si1-xGex), was formed. Incontrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm(2). Multiple pulse annealing at 0.1 J/cm(2) could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1-xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 degrees C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm(2) with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. (C) 1998 American Institute of Physics. [S0003-6951(98)04136-9].

引用

页码：1355 / 1357

页数：3

共 19 条

[11] INTERFACIAL REACTIONS AND SCHOTTKY BARRIERS OF PT AND PD ON EPITAXIAL SI1-XGEX ALLOYS [J].

LIOU, HK ;

WU, X ;

GENNSER, U ;

KESAN, VP ;

IYER, SS ;

TU, KN ;

YANG, ES .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :577-579

[12] Interfacial reactions of the Co/Si1-xGex system [J].

Luo, JS ;

Lin, WT ;

Chang, CY ;

Tsai, WC ;

Wang, SJ .

MATERIALS CHEMISTRY AND PHYSICS, 1997, 48 (02) :140-144

[13] Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films [J].

Luo, JS ;

Lin, WT ;

Chang, CY ;

Tsai, WC .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) :3621-3623

[14]

Mayer J W, 1990, ELECT MAT SCI INTEGR

[15] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON [J].

POATE, JM ;

LEAMY, HJ ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :918-920

[16] ULTRATHIN SIMGEN STRAINED LAYER SUPERLATTICES - A STEP TOWARDS SI OPTOELECTRONICS [J].

PRESTING, H ;

KIBBEL, H ;

JAROS, M ;

TURTON, RM ;

MENCZIGAR, U ;

ABSTREITER, G ;

GRIMMEISS, HG .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) :1127-1148

[17] REACTION OF TITANIUM WITH GERMANIUM AND SILICON-GERMANIUM ALLOYS [J].

THOMAS, O ;

DELAGE, S ;

DHEURLE, FM ;

SCILLA, G .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :228-230

[18] INTERFACIAL REACTION BETWEEN NI AND MBE-GROWN SIGE ALLOY [J].

THOMPSON, RD ;

TU, KN ;

ANGILLELO, J ;

DELAGE, S ;

IYER, SS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) :3161-3163

[19]

WANG Z, 1994, MATER RES SOC SYMP P, V320, P397

← 1 2 →