Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

被引：146

作者：

Plissard, Sebastien ^{[1
]}

Dick, Kimberly A. ^{[2
]}

Larrieu, Guilhem ^{[1
,3
]}

Godey, Sylvie ^{[1
]}

Addad, Ahmed ^{[4
]}

Wallart, Xavier ^{[1
]}

Caroff, Philippe ^{[1
]}

机构：

[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France

[2] Lund Univ, Solid State Phys & Nanometer Struct Consortium, S-22100 Lund, Sweden

[3] LAAS CNRS, F-31077 Toulouse, France

[4] Univ Lille 1, CNRS, UMR 8207, Unite Mat & Transformat, F-59655 Villeneuve Dascq, France

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 38期

基金：

瑞典研究理事会;

关键词：

SELECTIVE-AREA MOVPE; III-V NANOWIRES; MBE-VLS GROWTH; EPITAXIAL-GROWTH; INAS NANOWIRES; (111)SI SUBSTRATE; SI; HETEROEPITAXY; MECHANISM;

D O I：

10.1088/0957-4484/21/38/385602

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

引用

页数：8

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