Are diamonds a MEMS' best friend?

被引:63
作者
Auciello, Orlando [1 ,2 ]
Pacheco, Sergio
Sumant, Anirudha V. [1 ,2 ]
Gudeman, Chris
Sampath, Suresh
Datta, Arindom
Carpick, Robert W. [3 ]
Adiga, Vivekananda P. [4 ]
Zurcher, Peter
Ma, Zhenqiang [5 ]
Yuan, Hao-Chih [5 ]
Carlisle, John A.
Kabius, Bernd [6 ]
Hiller, Jon [6 ]
Srinivasan, Sudarsan [1 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[3] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA
[4] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[5] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[6] Argonne Natl Lab, Ctr Electron Microscopy, Argonne, IL 60439 USA
关键词
D O I
10.1109/MMM.2007.907816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
RF microelectromechanical/nanoelectromechanical devices (RF MEMS/NEMS) such as resonators and switches have been proved attractive for the next-generation military and communication systems. Most NEMS/MEMS devices are based on silicon because of the available surface-machining technology adapted from silicon based microelectronics batch fabrication technology. Diamonds provide properties that would potentially enhance the performance of the switches that include tribological and mechanical properties, as well as the low-trap characteristics and capability to tailor the conductivity of diamond films. The fabrication of the diamond-based RF MEMS/NEMS devices require the growth of smooth diamond films with uniform thickness, nanostructure, and properties over large area substrates. Thin-film deposition methods based on microwave plasma enhanced chemical vapor deposition (MPCVD) with hydrogen rich chemistry produce microcrystalline diamond films.
引用
收藏
页码:61 / 75
页数:15
相关论文
共 43 条
[1]   Piezoelectric properties and poling effect of Pb(Zr, Ti)O3 thick films prepared for microactuators by aerosol deposition [J].
Akedo, J ;
Lebedev, M .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1710-1712
[2]   Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films [J].
Angadi, Maki A. ;
Watanabe, Taku ;
Bodapati, Arun ;
Xiao, Xingcheng ;
Auciello, Orlando ;
Carlisle, John A. ;
Eastman, Jeffrey A. ;
Keblinski, Pawel ;
Schelling, Patrick K. ;
Phillpot, Simon R. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
[3]   Materials science and fabrication processes for a new MEMS technoloey based on ultrananocrystalline diamond thin films [J].
Auciello, O ;
Birrell, J ;
Carlisle, JA ;
Gerbi, JE ;
Xiao, XC ;
Peng, B ;
Espinosa, HD .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (16) :R539-R552
[4]  
BARKER NS, 1999, THESIS U MICHIGAN AN
[5]   Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J].
Bhattacharyya, S ;
Auciello, O ;
Birrell, J ;
Carlisle, JA ;
Curtiss, LA ;
Goyette, AN ;
Gruen, DM ;
Krauss, AR ;
Schlueter, J ;
Sumant, A ;
Zapol, P .
APPLIED PHYSICS LETTERS, 2001, 79 (10) :1441-1443
[6]   Bonding structure in nitrogen doped ultrananocrystalline diamond [J].
Birrell, J ;
Gerbi, JE ;
Auciello, O ;
Gibson, JM ;
Gruen, DM ;
Carlisle, JA .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5606-5612
[7]   Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond [J].
Birrell, J ;
Carlisle, JA ;
Auciello, O ;
Gruen, DM ;
Gibson, JM .
APPLIED PHYSICS LETTERS, 2002, 81 (12) :2235-2237
[8]   Mechanical properties of ultrananocrystalline diamond thin films relevant to MEMS/NEMS devices [J].
Espinosa, HD ;
Prorok, BC ;
Peng, B ;
Kim, KH ;
Moldovan, N ;
Auciello, O ;
Carlisle, JA ;
Gruen, DM ;
Mancini, DC .
EXPERIMENTAL MECHANICS, 2003, 43 (03) :256-268
[9]   A methodology for determining mechanical properties of freestanding thin films and MEMS materials [J].
Espinosa, HD ;
Prorok, BC ;
Fischer, M .
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 2003, 51 (01) :47-67
[10]   Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices [J].
Fan, W ;
Saha, S ;
Carlisle, JA ;
Auciello, O ;
Chang, RPH ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1452-1454