Density determination of focused-electron-beam-induced deposits with simple cantilever-based method

被引:36
作者
Utke, I
Friedli, V
Michler, J
Bret, T
Multone, X
Hoffmann, P
机构
[1] EMPA Mat Sci & Technol, Nanomech & Nanopatterning Grp, CH-3602 Thun, Switzerland
[2] Ecole Polytech Fed Lausanne, Adv Photon Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.2158516
中图分类号
O59 [应用物理学];
学科分类号
摘要
Freestanding deposits are grown on a silicon cantilever from a precursor gas by an electron induced process. Deposit mass determination is performed with an atomic force microscopy setup, where the cantilever resonance frequency shift, resulting from mechanical removal of the deposit, is measured. Deposits from hexafluoroacetylacetonato-Cu(I)-vinyltrimethylsilane show densities ranging from 2.05 +/- 0.45 to 3.75 +/- 0.55 g/cm(3). Deposits from tetramethoxysilane have a constant density of (1.9 +/- 0.3) g/cm(3). Densities of deposits from Co-2(CO)(8) and [RhCl(PF3)(2)](2) are linearly related to their composition. The ratio of impinging electrons per deposited atom, beam heating, and thermal stability of the precursor molecule determine the density and composition in focused-electron-beam-induced deposits. (c) 2006 American Institute of Physics.
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页码:1 / 3
页数:3
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