Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

被引：6

作者：

Jeon, S ^{[1
]}

Park, HM ^{[1
]}

Hong, S ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 10期

关键词：

ballast resistor; InGaP/GaAs HBT; passivation ledge;

D O I：

10.1109/16.954490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A InGaP/GaAs heterojunction bipolar transistor structure is proposed in which the base epi-layer underneath the extended ledge works as a base ballast resistor. The structure eliminates the critical alignment for a passivation ledge formation as well as additional process steps for external base ballast resistor. Both ballasted and unballasted devices were fabricated and compared. Small signal equivalent circuit gives us the magnitude of the effective ballast resistance. The thermal characteristics, including gain-collapsed I-V and Vb, regression curve are shown and modeled. The temperature dependency of base sheet resistance and its influence on the device performance are also discussed.

引用

页码：2442 / 2445

页数：4

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