High-performance and electrically stable C60 organic field-effect transistors

被引：89

作者：

Zhang, X.-H. ^{[1
]}

Domercq, B. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2778472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on high-performance C-60 organic field-effect transistors fabricated by physical vapor deposition. Electron mobility ranging from 2.7 to 5.0 cm(2)/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C-60 at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (< 0.7 V/decade), on/off current ratios larger than 10(6), excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.

引用

页数：3

共 11 条

[1] MOISTURE ABSORPTION CHARACTERISTICS OF ORGANOSILOXANE SELF-ASSEMBLED MONOLAYERS [J].

ANGST, DL ;

SIMMONS, GW .

LANGMUIR, 1991, 7 (10) :2236-2242

[2] High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films [J].

Anthopoulos, Thomas D. ;

Singh, Birendra ;

Marjanovic, Nenad ;

Sariciftci, Niyazi S. ;

Ramil, Alberto Montaigne ;

Sitter, Helmut ;

Colle, Michael ;

de Leeuw, Dago M. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[3] Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].

Chesterfield, RJ ;

McKeen, JC ;

Newman, CR ;

Ewbank, PC ;

da Silva, DA ;

Brédas, JL ;

Miller, LL ;

Mann, KR ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292

[4] High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors [J].

Chua, LL ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3400-3402

[5] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[6] C-60 THIN-FILM TRANSISTORS [J].

HADDON, RC ;

PEREL, AS ;

MORRIS, RC ;

PALSTRA, TTM ;

HEBARD, AF ;

FLEMING, RM .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123

[7] High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates [J].

Itaka, Kenji ;

Yamashiro, Mitsugu ;

Yamaguchi, Jun ;

Haemori, Masamitsu ;

Yaginuma, Seiichiro ;

Matsumoto, Yuji ;

Kondo, Michio ;

Koinuma, Hideomi .

ADVANCED MATERIALS, 2006, 18 (13) :1713-+

[8] Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].

Kobayashi, S ;

Takenobu, T ;

Mori, S ;

Fujiwara, A ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583

[9] Encapsulation of pentacene/C60 organic solar cells with Al2O3 deposited by atomic layer deposition [J].

Potscavage, W. J. ;

Yoo, S. ;

Domercq, B. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[10] Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors [J].

Ramil, AM ;

Singh, TB ;

Haber, NT ;

Günes, S ;

Andreev, A ;

Matt, GJ ;

Resel, R ;

Sitter, H ;

Sariciftci, S .

JOURNAL OF CRYSTAL GROWTH, 2006, 288 (01) :123-127

← 1 2 →