1.4μm continuous-wave GaInNAs distributed feedback laser diodes

被引：6

作者：

Gollub, D ^{[1
]}

Moses, S ^{[1
]}

Kamp, M ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 25期

关键词：

D O I：

10.1049/el:20031166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Singlemode continuous-wave (CW) operation of GaInNAs distributed feedback (DFB) laser diodes emitting at 1.4 mum has been realised. Solid source molecular beam epitaxy was used to grow a double quantum well separate confinement heterostructure with GaInNAs active layer. Threshold currents. as low as 42 mA and external efficiencies as high as 0.24 W/A have been demonstrated in CW operation. Singlemode emission at 1406 nm with a sidemode suppression ratio larger than 49 dB has been achieved.

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收藏

页码：1815 / 1816

页数：2

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