SiGe heterostructures for FET applications

被引：67

作者：

Whall, TE ^{[1
]}

Parker, EHC ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 12期

关键词：

D O I：

10.1088/0022-3727/31/12/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and ill-V modulation-doped FETs. In this article the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed.

引用

页码：1397 / 1416

页数：20

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