Effect of carbon on dopant-vacancy pair stability in germanium

被引：19

作者：

Chroneos, A. ^{[1
,2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 09期

关键词：

DIFFUSION; BORON;

D O I：

10.1088/0268-1242/26/9/095017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Density functional theory calculations were used to study the interaction between carbon and isolated substitutional dopants (boron, gallium, aluminium, indium, silicon, tin, nitrogen, phosphorous, arsenic and antimony) and dopant-vacancy pairs in germanium. It is predicted that there is a range of different association preferences, with carbon being strongly bound in some cluster geometries and dopants and unbound in others. If dopant-carbon pairs form they can act as vacancy traps to form larger and bound clusters. As vacancies are important for diffusion and cluster formation in germanium, the results are discussed in view of recent experimental studies.

引用

页数：5

共 34 条

[1] The vacancy in silicon: A critical evaluation of experimental and theoretical results [J].

Bracht, Hartmut ;

Chroneos, Alexander .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)

[2] Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results [J].

Brotzmann, S. ;

Bracht, H. ;

Hansen, J. Lundsgaard ;

Larsen, A. Nylandsted ;

Simoen, E. ;

Haller, E. E. ;

Christensen, J. S. ;

Werner, P. .

PHYSICAL REVIEW B, 2008, 77 (23)

[3] Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium [J].

Brotzmann, Sergej ;

Bracht, Hartmut .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[4] Mechanism of B diffusion in crystalline Ge under proton irradiation [J].

Bruno, E. ;

Mirabella, S. ;

Scapellato, G. ;

Impellizzeri, G. ;

Terrasi, A. ;

Priolo, F. ;

Napolitani, E. ;

De Salvador, D. ;

Mastromatteo, M. ;

Carnera, A. .

PHYSICAL REVIEW B, 2009, 80 (03)

[5] Isovalent impurity-vacancy complexes in germanium [J].

Chroneos, A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09) :3206-3210

[6] E centers in ternary Si1-x-yGexSny random alloys [J].

Chroneos, A. ;

Jiang, C. ;

Grimes, R. W. ;

Schwingenschloegl, U. ;

Bracht, H. .

APPLIED PHYSICS LETTERS, 2009, 95 (11)

[7] Defect interactions in Sn1-xGex random alloys [J].

Chroneos, A. ;

Jiang, C. ;

Grimes, R. W. ;

Schwingenschloegl, U. ;

Bracht, H. .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[8] Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium [J].

Chroneos, A. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)

[9] Nonlinear stability of E centers in Si1-xGex: Electronic structure calculations [J].

Chroneos, A. ;

Bracht, H. ;

Jiang, C. ;

Uberuaga, B. P. ;

Grimes, R. W. .

PHYSICAL REVIEW B, 2008, 78 (19)

[10] Impact of germanium on vacancy clustering in germanium-doped silicon [J].

Chroneos, A. ;

Grimes, R. W. ;

Bracht, H. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)

← 1 2 3 4 →