Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector

被引：14

作者：

Chang, CS ^{[1
]}

Chang, SJ

Su, YK

Chen, WS

Shen, CF

Shei, SC

Lo, HM

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsinshi 744, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期

关键词：

power chip; ITO; Al reflector;

D O I：

10.1143/JJAP.44.2462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitride-based large size (i.e. 1 mm x 1 mm) indium-tin-oxide (ITO) light emitting diodes (LEDs) were successfully fabricated. In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84.8 mW (W-P-E = 7.2%) at 460 nm for the power chip with ITO as p-contacts and At as back-side reflector. It was also found that ITO power chip with Al reflector was more reliable.

引用

页码：2462 / 2464

页数：3

共 11 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] High brightness InGaN green LEDs with an ITO on n++-SPS upper contact [J].

Chang, CS ;

Chang, SJ ;

Su, YK ;

Kuo, CH ;

Lai, WC ;

Lin, YC ;

Hsu, YP ;

Shei, SC ;

Tsai, JM ;

Lo, HM ;

Ke, JC ;

Shen, JK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (11) :2208-2212

[3] Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure [J].

Chang, KM ;

Chu, JY ;

Cheng, CC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (08) :1807-1809

[4] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Lin, HY ;

Ke, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443

[5] Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN [J].

Kim, SY ;

Jang, HW ;

Lee, JL .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :61-63

[6]

Nagahama S, 2001, PHYS STATUS SOLIDI A, V188, P1, DOI 10.1002/1521-396X(200111)188:1<1::AID-PSSA1>3.0.CO

[7]

2-S

[8] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[9] Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts [J].

Pan, SM ;

Tu, RC ;

Fan, YM ;

Yeh, RC ;

Hsu, JT .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (05) :646-648

[10] Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer [J].

Sheu, JK ;

Tsai, JM ;

Shei, SC ;

Lai, WC ;

Wen, TC ;

Kou, CH ;

Su, YK ;

Chang, SJ ;

Chi, GC .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) :460-462

← 1 2 →