Photoluminescence spectroscopy of self-assembled (InGa)As quantum dots in high magnetic fields

被引:10
作者
Hayden, RK
Uchida, K
Miura, N
Polimeni, A
Stoddart, ST
Henini, M
Eaves, L
Main, PC
机构
[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan
[2] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
基金
日本学术振兴会; 英国工程与自然科学研究理事会;
关键词
self-assembled quantum dots; (InGa)As-GaAs;
D O I
10.1016/S0921-4526(98)00111-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Structures are investigated with InAs and In0.5Ga0.5As self-organised quantum dots embedded in GaAs matrices grown on (1 0 0) and (3 1 1) substrates. The photoluminescence (PL) line widths for In0.5Ga0.5As quantum dots on the high-index planes are significantly narrower than have previously been reported. From the diamagnetic shift of the PL in magnetic fields up to 42 T, the spatial extent of the carrier wave function is estimated and compared with the geometrical size of the dots. A model is developed to qualitatively explain the narrow PL and large diamagnetic shift for the quantum dots grown on (3 1 1) planes. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:262 / 266
页数:5
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