Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

A simulator using the coupled Schrodinger equation, the Poisson equation and Fermi-Dirac statistics to analyse inversion-layer quantization has been shown to match the measured C-V data of thin-gate-oxide metal-oxide semiconductor (MOS) capacitors closely. This simulator is used to study in detail the effects of bias voltage, oxide thickness and doping concentration on the charge centroid and from this a simple empirical model for the do charge centroid of the inversion layer is proposed, This model predicts the inversion charge density in terms of T-ox, V-t and V-g explicitly and can be used to estimate transistor current in device engineering and circuit simulation models.