Epitaxial growth of ZnO films

被引：202

作者：

Triboulet, R

Perrière, J

机构：

[1] CNRS, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France

[2] Univ Paris 06, Phys Solides Grp, F-75015 Paris, France

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2003年 / 47卷 / 2-3期

关键词：

molecular beam epitaxy; physical vapor deposition processes; metalorganic chemical vapor deposition; laser epitaxy; ZnO; semiconducting II-VI materials;

D O I：

10.1016/j.pcrysgrow.2005.01.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

After summing up the main physical properties of ZnO and its subsequent applications the aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc...., keeping constantly in mind some key issues for the device applications of ZnO in optoelectronics, surface acoustic filters and spintronics, amongst which the growth of high quality epitaxial layers of both n- or p-type conductivity, the possibility of dissolving transition elements in the layers, the growth of ZnO related alloys and heterostructures are of major significance. (c) 2005 Elsevier Ltd. All rights reserved.

引用

收藏

页码：65 / 138

页数：74

相关论文

共 348 条

[1] Time-resolved spectroscopy measurements of a titanium plasma induced by nanosecond and femtosecond lasers [J].

Albert, O ;

Roger, S ;

Glinec, Y ;

Loulergue, JC ;

Etchepare, J ;

Boulmer-Leborgne, C ;

Perrière, J ;

Millon, E .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (03) :319-323

[2] Infrared dielectric functions and phonon modes of high-quality ZnO films [J].

Ashkenov, N ;

Mbenkum, BN ;

Bundesmann, C ;

Riede, V ;

Lorenz, M ;

Spemann, D ;

Kaidashev, EM ;

Kasic, A ;

Schubert, M ;

Grundmann, M ;

Wagner, G ;

Neumann, H ;

Darakchieva, V ;

Arwin, H ;

Monemar, B .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :126-133

[3]

ASHRAFI ABM, 2000, PHYS STATUS SOLIDI A, V192, P224

[4] Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy [J].

Ashrafi, ABMA ;

Suemune, I ;

Kumano, H ;

Tanaka, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (11B) :L1281-L1284

[5] H2O-vapor-activated ZnO growth on a-face sapphire substrates by metalorganic molecular-beam epitaxy [J].

Ashrafi, ABMA ;

Suemune, I ;

Kumano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A) :2851-2854

[6] Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers [J].

Ashrafi, ABMA ;

Ueta, A ;

Avramescu, A ;

Kumano, H ;

Suemune, I ;

Ok, YW ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :550-552

[7] GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS [J].

AULD, J ;

HOULTON, DJ ;

JONES, AC ;

RUSHWORTH, SA ;

MALIK, MA ;

OBRIEN, P ;

CRITCHLOW, GW .

JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (08) :1249-1253

[8] Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon [J].

Ayouchi, R ;

Martin, F ;

Leinen, D ;

Ramos-Barrado, JR .

JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) :497-504

[9] Growth and characterization of ZnO thin films grown by pulsed laser deposition [J].

Bae, SH ;

Lee, SY ;

Jin, BJ ;

Im, S .

APPLIED SURFACE SCIENCE, 2001, 169 :525-528

[10] Pulsed laser deposition of ZnO thin films for applications of light emission [J].

Bae, SH ;

Lee, SY ;

Jin, BJ ;

Im, S .

APPLIED SURFACE SCIENCE, 2000, 154 :458-461

← 1 2 3 4 5 6 7 8 9 10 →