Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure

被引：28

作者：

Ishida, M

Ogawa, M

Orita, K

Imafuji, O

Yuri, M

Sugino, T

Itoh, K

机构：

[1] Matsushita Elect Corp, Semicond Co, Semicond Device Res Ctr, Takatsuki, Osaka 5691193, Japan

[2] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

group-III nitride; threading dislocation; etch pit; regrowth; grooved stripe structure; transmission electron microscopy;

D O I：

10.1016/S0022-0248(00)00711-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is demonstrated that the density of threading dislocation in GaN is drastically reduced by utilizing regrowth technique on grooved stripe structure. The threading dislocations in GaN regrown on grooves tend to propagate off the c-axis so that an area with significantly reduced dislocation density is formed above the grooves. As a result, the threading dislocation density was reduced from 5 x 10(9) to 6.3 x 10(6) cm(-2). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：345 / 349

页数：5

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