Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

被引：5

作者：

Adachi, Susumu ^{[1
]}

Okamura, Shoichi ^{[1
]}

机构：

[1] Shimadzu Co Ltd, Technol Res Lab, Kyoto 6190237, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

关键词：

ELECTRONICS; STAMP;

D O I：

10.1143/APEX.3.104101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current-voltage characteristics exhibited good field-effect mobility exceeding 10 cm(2) V-1 s(-1). The on/off current ratio and subthreshold slope were 4 x 105 and 0.86 V/decade, respectively. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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