Inversion domains in AlN grown on (0001) sapphire

被引：118

作者：

Jasinski, J

Liliental-Weber, Z

Paduano, QS

Weyburne, DW

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 14期

关键词：

D O I：

10.1063/1.1616191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2degrees+/-0.5degrees from the c axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH. (C) 2003 American Institute of Physics.

引用

页码：2811 / 2813

页数：3

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