Low-temperature fabrication of Ir/Pb(ZrTi)O3/Ir capacitors solely by metalorganic chemical vapor deposition

被引：55

作者：

Fujisawa, H ^{[1
]}

Kita, K ^{[1
]}

Shimizu, M ^{[1
]}

Niu, H ^{[1
]}

机构：

[1] Himeji Inst Technol, Fac Engn, Dept Elect, Himeji, Hyogo 6712201, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9B期

关键词：

Pb(Zr; Ti)O-3 thin film; Ir electrode; MOCVD; low-temperature growth;

D O I：

10.1143/JJAP.40.5551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ir/Pb(Zr,Ti)O-3(PZT)/Ir capacitors were fabricated solely by metalorganic chemical vapor deposition (MOCVD). Both top and bottom Ir electrodes with mirror like surfaces were obtained at 300 degreesC by MOCVD. Ferroelectric PZT thin films were successfully prepared at 395-540 degreesC by MOCVD using (C2H5)(3)PbOCH2C(CH3)(3) as a Pb precursor and PbTiO3 as a seed. Both Ir electrodes and PZT thin films showed good step coverage of 70-80%. PZT films prepared at 445-540 degreesC exhibited well-saturated hysteresis loops with remanent polarization of 19-25 muC/cm(2).

引用

页码：5551 / 5553

页数：3

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