Surface passivation of InP/In0.53Ga0.47As heterojunction bipolar transistors for opto-electronic integration

被引：4

作者：

Kim, DS

Chao, CP

Beyzavi, K

Burrows, PE

Forrest, SR

机构：

[1] Adv. Technol. Ctr. Photonics O., Department of Electrical Engineering, Princeton University, Princeton

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

heterojunction bipolar transistors (HBT); InP; optoelectronic integrated circuit (OEIC); surface passivation;

D O I：

10.1007/BF02666632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time, a surface passivation technique for InP/In0.53Ga0.47As heterojunction bipolar transistors that is suitable for optoelectronic integrated circuits. The combination of buffered hydrofluoric acid with high temperature annealing of the surface causes significant increase of the gain at low input currents. Using this technique, transistors were integrated with photodetectors and other optoelectronic devices and had current gains as high as 400 even at nanoampere base currents.

引用

收藏

页码：537 / 540

页数：4

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