Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

被引：12

作者：

Hsu, CY

Lan, WH ^{[1
]}

Wu, YCS

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

GaN; LEDs; ITO contact; leakage; dislocation;

D O I：

10.1143/JJAP.44.7424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700 degrees C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.

引用

收藏

页码：7424 / 7426

页数：3

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