Selective growth of InAs quantum dots on patterned GaAs

被引：7

作者：

Hsieh, TP

Chiu, PC

Liu, YC

Yeh, NT

Ho, WJ

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

[2] Chunghwa Telecom Co Ltd, Telecommun Labs, Yangmei 326, Taiwan

[3] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 01期

关键词：

D O I：

10.1116/1.1856464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report selective growth of InAs self-assembled quantum dots (QDs) on nano-ridges (30-50 nm) formed by wet chemical etching and epitaxial growth processes. The QDs formed on the ridges exhibit distinctive characteristics from those on the planar region between the ridges in terms of physical shape as well as optical property. The QDs, which align one by one on the top of the ridges, are of an asymmetric shape along the [011] and [0 (1) under bar1] directions. By defining the width of ridge and the monolayers of QDs, we are able to control the height and the width of these QDs. Compared to the QDs on the planar region between the ridges, the luminescence from QDs on the ridges exhibits a shorter wavelength, which is attributed to higher compressive strain in these QDs. (C) 2005 American Vacuum Society.

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页码：262 / 266

页数：5

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