Short channel characteristics of Gallium-Indium-Zinc-Oxide thin film transistors for three-dimensional stacking memory

被引：75

作者：

Song, Ihun ^{[1
]}

Kim, Sunil ^{[1
]}

Yin, Huaxiang ^{[1
]}

Kim, Chang Jung ^{[1
]}

Park, Jaechul ^{[1
]}

Kim, Sangwook ^{[1
]}

Choi, Hyuk Soon ^{[1
]}

Lee, Eunha ^{[2
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Suwon 440600, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 440600, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 06期

关键词：

Gallium-Indium-Zinc-Oxide (GIZO); thin film; transistor (TFT); three-dimensional (3-D) stacking memory;

D O I：

10.1109/LED.2008.920965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous Gallium-Indium-Zine-Oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO thin film transistors showed a high mobility of 8.2 cm(2)/V . s with on-to-off current ratios up to 10(6). Excellent short channel characteristics were also obtained with a small shift of the threshold voltages and no degradation of subthreshold slopes as V-DS increased, even with short channel lengths of less than 100 nm. These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.

引用

页码：549 / 552

页数：4

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