Transmission electron microscopy study of Ni silicides formed during metal-induced silicon growth

被引:18
作者
Guliants, EA
Anderson, WA [1 ]
Guo, LP
Guliants, VV
机构
[1] SUNY Buffalo, Dept Elect Engn, Amherst, NY 14260 USA
[2] SUNY Buffalo, Mat Res Instrument Facil, Amherst, NY 14260 USA
[3] Univ Cincinnati, Dept Chem Engn, Cincinnati, OH 45221 USA
基金
美国国家航空航天局;
关键词
transmission electron microscopy; Ni silicides; metal-induced;
D O I
10.1016/S0040-6090(00)01916-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline silicon thin films grown on a Ni prelayer by the metal-induced growth (MIG) technique were studied by cross-sectional transmission electron microscopy and shown to possess a columnar structure. A Ni silicide transition region is formed due to the reaction between a fine-grained metallic Ni with atomic Si provided by the deposition source. This region exhibits a stratified structure as revealed by selected area diffraction patterns. The top layer is found to be a pure NiSi2 phase, which provides nucleation sites for the epitaxial Si growth. The bottom layer represents a mixture of several randomly oriented phases with a more Ni-rich composition. Go-existence of the above mentioned phases suggests that the silicide formation is controlled by the Ni-to-Si concentration ratio rather than temperature. No migration of the Ni silicide precipitates into the silicon film is observed. The formation mechanism of poly-Si on a Ni prelayer is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:74 / 80
页数:7
相关论文
共 32 条
[1]   PHASE-SEPARATION AND LAYER SEQUENCE REVERSAL DURING SILICIDE FORMATION WITH NI-CR ALLOYS AND NI-CR BILAYERS [J].
APPELBAUM, A ;
EIZENBERG, M ;
BRENER, R .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :914-919
[2]   TEMPLATE STRUCTURE AT THE SILICON/AMORPHOUS-SILICIDE INTERFACE [J].
BENNETT, PA ;
LEE, MY ;
YANG, P .
PHYSICAL REVIEW LETTERS, 1995, 75 (14) :2726-2729
[3]   NISI2 PRECIPITATION IN NICKEL-IMPLANTED SILICON FILMS [J].
CAMMARATA, RC ;
THOMPSON, CV ;
TU, KN .
APPLIED PHYSICS LETTERS, 1987, 51 (14) :1106-1108
[4]   TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON THE LATERAL GROWTH OF NICKEL SILICIDES [J].
CHEN, SH ;
ZHENG, LR ;
CARTER, CB ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :258-263
[5]   Salicidation process using NiSi and its device application [J].
Deng, F ;
Johnson, RA ;
Asbeck, PM ;
Lau, SS ;
Dubbelday, WB ;
Hsiao, T ;
Woo, J .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :8047-8051
[6]   DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS [J].
DHEURLE, F ;
PETERSSON, S ;
STOLT, L ;
STRIZKER, B .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5678-5681
[7]   High resolution electron microscopy study of nickel silicide - Silicon interface grown by molecular beam epitaxy [J].
Feng, YZ ;
Wu, ZQ .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (22) :2000-2001
[8]   GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J].
GOSELE, U ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3252-3260
[9]   Reinvestigation of the Ni/Si interface: Spectromicroscopic evidence for multiple silicide phases [J].
Gregoratti, L ;
Gunther, S ;
Kovac, J ;
Casalis, L ;
Marsi, M ;
Kiskinova, M .
PHYSICAL REVIEW B, 1998, 57 (12) :R6799-R6802
[10]   SILICIDE FORMATION AND SILICIDE-MEDIATED CRYSTALLIZATION OF NICKEL-IMPLANTED AMORPHOUS-SILICON THIN-FILMS [J].
HAYZELDEN, C ;
BATSTONE, JL .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8279-8289