Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field

被引：23

作者：

Kuwayama, T ^{[1
]}

Ichimura, M ^{[1
]}

Arai, E ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1597988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface recombination velocity of silicon-on-insulator (SOI) wafers was measured by the microwave-reflectance photoconductivity-decay method. The carrier lifetime was obtained with interface recombination suppressed by applying voltage between the SOI layer and the substrate. The interface recombination velocity was then estimated by comparing two lifetime values with and without voltage application. The velocity is from 500 to 1800 cm/s, relatively large as for thermally oxidized Si/SiO2 interfaces. (C) 2003 American Institute of Physics.

引用

页码：928 / 930

页数：3

共 10 条

[1] A study of interface states of directly bonded silicon-on-insulator structures [J].

Buldygin, SA ;

Golod, SV ;

Kamaev, GN ;

Skok, EM .

JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) :107-111

[2] INJECTION-LEVEL-DEPENDENT RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE FOR VARIOUS DOPANT CONCENTRATIONS [J].

GLUNZ, SW ;

SPROUL, AB ;

WARTA, W ;

WETTLING, W .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1611-1615

[3] Slow decay of excess carrier concentration in bonded silicon-on-insulator wafers [J].

Hirano, M ;

Ichimura, M ;

Arai, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12A) :6513-6514

[4] Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method [J].

Ichimura, M ;

Ito, S ;

Arai, E .

SOLID-STATE ELECTRONICS, 2002, 46 (04) :545-553

[5] EFFECT OF ULTRAVIOLET-LIGHT IRRADIATION ON NONCONTACT LASER MICROWAVE LIFETIME MEASUREMENT [J].

KATAYAMA, K ;

KIRINO, Y ;

IBA, K ;

SHIMURA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (11B) :L1907-L1910

[6] Silicon wafer surface passivation by low-temperature oxidation prior to ultraviolet radiation for photoconductive decay measurement [J].

Lee, WP ;

Khong, YL .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7845-7847

[7] Characterization of Si wafer surfaces after wet chemical treatment by the microwave reflectance photconductivity decay method with surface electric field [J].

Tada, A ;

Hirano, M ;

Ichimura, M ;

Arai, E ;

Takamatsu, H ;

Sumie, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A) :3069-3074

[8] Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers [J].

Takahashi, M ;

Nakashima, S ;

Kodate, J ;

Ohno, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9A) :5211-5216

[9] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFET(S) BY A THRESHOLD-VOLTAGE METHOD [J].

YANG, PC ;

LI, SS .

SOLID-STATE ELECTRONICS, 1993, 36 (05) :801-802

[10] Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer [J].

Yoshida, H ;

Sasakura, H ;

Yabuuchi, T ;

Takami, T ;

Uchihashi, T ;

Kishino, S .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1825-1827

← 1 →