Study of the current-voltage characteristics in MOS capacitors with Si-implanted gate oxide

被引：18

作者：

Kameda, E

Matsuda, T

Emura, Y

Ohzone, T ^{[1
]}

机构：

[1] Toyama Prefectural Univ, Dept Elect & Informat, Kosugi, Toyama 9390398, Japan

[2] Toyama Natl Coll Technol, Dept Elect Engn, Toyama 939, Japan

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(98)00299-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The specific gate current density (J(G)) Versus voltage (VG) characteristics of MOS capacitors with 50 nm thick, implanted SiO2 (using various Si doses between 10(13) and 3 x 10(16) cm(-2)) have been studied under inversion and accumulation conditions. From an analysis of dynamic resistance and current humps in the J(G)-V-G characteristics of the above devices, a qualitative model of the conduction mechanism has been proposed. Major current components in the model are the following: a direct tunnel current of electrons and holes related to traps generated by Si-implantation, a charging current of electrons and holes to traps distributed a little inside the gate oxide, a trap-assisted current and a Fowler-Nordheim tunnel current. The model can explain the J(G)-V-G curves and the change of the J(G)-V-G characteristics on the basis of the Si atomic distribution in the gate oxide. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：555 / 563

页数：9

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