Radiation-induced defects in solar cell materials

被引:53
作者
Bourgoin, JC [1 ]
de Angelis, N [1 ]
机构
[1] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, CNRS, UMR 7603, F-75252 Paris 05, France
关键词
defects; Si; GaAs; GaInP; irradiation;
D O I
10.1016/S0927-0248(00)00208-7
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We review the knowledge and understanding of proton and electron irradiation-induced defects in Si, GaAs and GaInP. We describe their nature, evaluate their introduction rates, give the electronic characteristics of the defects which play the role of recombination centers and of those which play the role of compensating centers. We then briefly describe the techniques which allow to determine these characteristics and to differentiate recombination centers and compensating centers among all the created defects. Finally, we develop and illustrate the role these specific defects play on the current generated by a solar cell. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:467 / 477
页数:11
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