Intrinsic Mechanisms of Memristive Switching

被引：99

作者：

Nagashima, Kazuki ^{[1
]}

Yanagida, Takeshi ^{[1
,2
]}

Oka, Keisuke ^{[1
]}

Kanai, Masaki ^{[1
]}

Klamchuen, Annop ^{[1
]}

Kim, Jin-Soo ^{[3
]}

Park, Bae Ho ^{[3
]}

Kawai, Tomoji ^{[1
,3
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 143701, South Korea

来源：

NANO LETTERS | 2011年 / 11卷 / 05期

关键词：

Resistive switching; nonvolatile memory; nanowires; p-type oxides; redox; TRANSITION-METAL OXIDES; RANDOM-ACCESS MEMORY; COBALT OXIDE; THIN-FILMS; HETEROSTRUCTURED NANOWIRES; RESISTANCE; NANOFILAMENTS; NANODEVICES; SYSTEMS;

D O I：

10.1021/nl200707n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.

引用

页码：2114 / 2118

页数：5

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