Low-temperature growth of aluminum nitride on sapphire substrates

被引：28

作者：

Guo, QX ^{[1
]}

Yahata, K ^{[1
]}

Tanaka, T ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 257卷 / 1-2期

关键词：

crystal structure; X-ray diffraction; nitride; sapphire; semiconducting aluminum compounds;

D O I：

10.1016/S0022-0248(03)01565-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 [物理学]; 070205 [凝聚态物理]; 0703 [化学]; 080501 [材料物理与化学];

摘要：

AIN films were grown on sapphire substrates by radio frequency (RF) magnetron sputtering in an ambient of argon and nitrogen, using a pure aluminum target. The dependence of growth properties on substrate temperature and nitrogen concentration was investigated. It was shown that c-axis preferred wurtzite AIN films can be obtained at growth temperature as low as 100degreesC with nitrogen concentration range from 20% to 100%. The crystallinity of AIN was improved with decreasing nitrogen concentration at a substrate temperature of 100degreesC. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：123 / 128

页数：6

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