Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs

The influence of GaN buffer layer on crystallinity of indium nitride layers grown on (1 1 1)GaAs was investigated. The InN layers were grown at 100degreesC on the GaN buffer layer with various growth temperatures and thicknesses. it was found that both the growth temperature and thickness of GaN buffer layer are critical for obtaining single-crystalline InN on (1 1 1)GaAs substrates. A single-crystal GaN buffer layer with thickness of about 30 nm was needed to obtain high-quality InN epilayers on (1 1 1)GaAs substrates in our case. (C) 2002 Elsevier Science B.V. All rights reserved.