ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO -: art. no. 092103

ZnO p-n homojunctions were fabricated on quartz substrates by depositing Al-doped n-type ZnO layer on Al-N-co-doped p-type ZnO layer through reactive magnetron sputtering. In/Zn metal contacts to as-grown ZnO show ohmic behavior, and the ohmic contacts can be improved by annealing in an Ar ambient. The optimal annealing temperatures for Al-N-co-doped ZnO and Al-doped ZnO are 550 degrees C and 600 degrees C, respectively. The p-n junction characteristic is confirmed by current-voltage measurements. The turn-on voltage is 2 V, with a low leakage current under reverse bias. Series resistances of the ZnO p-n junctions can be lowered by optimizing the annealing temperature, increasing the grain size of the ZnO, or increasing the hole concentration of the p layer.