Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx,Ti1-x)O3 thin films on Si using epitaxial g-Al2O3 Layers -: art. no. 202906

This letter reports on the fabrication and investigation of ferroelectric epitaxial Pb(Zr, Ti)O-3(2)3((PZT)/Pt films on Si substrates using epitaxial g-Al)O (buffer layer for Si integrated ferroelectric devices. (001) and (111) epitaxial g-Al)(O)(2)(3) films were grown on Si(001) and Si(111) substrates, respectively, using chemical vapor deposition. PZT films with various compositions were epitaxially grown on epitaxial Pt coated substrates using a sol-gel method. Epitaxial PZT films exhibited better ferroelectric and pyroelectric properties than polycrystalline PZT films. In particular, maximum pyroelectric coefficients of the epitaxial films were obtained, with values of 1.8 x 10-8 C/cm2 K for the PZT(001) film with a Zr/Ti ratio of 40/60 and 1.4 x 10-8 C/cm2K for the PZT(111) film with a Zr/Ti ratio of 52/48. 2005 American Institute of Physics.