Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

被引：224

作者：

Conley, John F., Jr. ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97333 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2010年 / 10卷 / 04期

基金：

美国国家科学基金会;

关键词：

Amorphous oxide semiconductors (AOS); bias stressing; reliability; stability; transparent thin-film transistors (TTFTs); FIELD-EFFECT TRANSISTOR; BIAS-STRESS; STABILITY; TEMPERATURE; PERFORMANCE; PASSIVATION; ELECTRONICS; MECHANISMS; DEPENDENCE; INJECTION;

D O I：

10.1109/TDMR.2010.2069561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to > 50 cm(2)/V . s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for organic light-emitting diode displays. Before any of these applications can be commercialized, however, a strong understanding of the stability and reliability of AOS TFTs is needed. The purpose of this paper is to provide a comprehensive review and summary of the recently emerging work on the stability and reliability of AOS TFTs with respect to illumination, bias stress, ambient effects, surface passivation, mechanical stress, and defects, as well as to point out areas for future work. An overview of the TFT operation and expected reliability concerns as well as a brief summary of the instabilities in the well-known Si3N4/a-Si:H system is also included.

引用

页码：460 / 475

页数：16

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