Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography

被引：66

作者：

Kim, Tae Sun ^{[1
]}

Kim, Sang-Mook ^{[1
]}

Jang, Yun Hee ^{[1
]}

Jung, Gun Young ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期

关键词：

D O I：

10.1063/1.2802557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The light extraction efficiency of light emitting diodes (LEDs) was enhanced by incorporating nanoscale patterns inside the LED structure. A hole patterned p-GaN layer and a pillar patterned indium-tin-oxide (ITO) contact layer were fabricated by using colloidal lithography with size-tunable polystyrene spheres. It was found that the light output power (at 20 mA) of the LEDs with the hole patterned p-GaN layer and the pillar patterned ITO contact layer were enhanced by 21% and 10%, respectively, compared with the conventional LED due to the increase of the extraction probability of the internally reflected photons through the patterns. (C) 2007 American Institute of Physics.

引用

页数：3

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