Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

被引：5

作者：

Boosalis, A. ^{[1
]}

Hofmann, T. ^{[1
]}

Sik, J. ^{[2
]}

Schubert, M. ^{[1
]}

机构：

[1] Univ Nebraska Lincoln, Dept Elect Engn, Lincoln, NE 68588 USA

[2] ON Semicond, Roznov Radhostem, Czech Republic

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 09期

基金：

美国国家科学基金会;

关键词：

Terahertz; Isotype; Homojunction; Silicon; Spectroscopic ellipsometry; SILICON;

D O I：

10.1016/j.tsf.2010.11.092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2604 / 2607

页数：4

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