Antimonide type-II "W" lasers: growth studies and guided-mode leakage into substrate

被引：15

作者：

Bewley, WW ^{[1
]}

Canedy, CL ^{[1
]}

Kim, CS ^{[1
]}

Vurgaftman, I ^{[1
]}

Kim, M ^{[1
]}

Meyer, JR ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

antimonide laser; quantum well;

D O I：

10.1016/j.physe.2003.08.060

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The lasing characteristics of mid-IR type-II "W" [InAs/GaInSb/InAs/AlAsSb] structures are found to correlate strongly with the growth conditions and low-temperature photoluminescence (PL) properties. The highest PL intensities and narrowest PL lines are obtained when the wafers are grown at approximate to 480-510degreesC with mixed interface bonds. A number of structures grown at a non-optimal lower temperature ( approximate to 425degreesC) nonetheless yielded lower lasing thresholds, lower internal losses, and longer Shockley-Read lifetimes than any grown previously on the present Riber 32P NME system. All of the laser spectra display regularly-spaced multiple peaks that are consistent with periodic modulation of the cavity loss due to mode-leakage into the GaSb substrate. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：466 / 470

页数：5

共 19 条

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KASPI R, COMMUNICATION

[12] Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at λ=3.30 μm [J].