High-speed response of uni-traveling-carrier photodiodes

被引:143
作者
Ishibashi, T
Kodama, S
Shimizu, N
Furuta, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 10期
关键词
photodiode; photodetector; carrier transit time; velocity overshoot; InP; InGaAs; InGaAsP; frequency response;
D O I
10.1143/JJAP.36.6263
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photoresponse of a uni-traveling-carrier photodiode (UTC-PD); which is configured with a neutral narrow-gap, light absorption layer and a depleted wide-gap carrier collecting layer, is investigated by small-signal analysis. Drift-diffusion model was used for analyzing carrier dynamics in the absorption layer. For accurately predicting the frequency response, a boundary condition at the edge of the absorption layer by as carefully treated by taking into account the electron thermionic emission velocity. High electron mobility in the absorption layer and high drift velocity in the carrier collecting layer associated with the velocity overshoot effect are both essential for short response times. Calculations performed on InP/InGaAsP UTC-PDs with the same absorption and carrier collecting layer thicknesses show that the response can be dominated by the electron transport in the absorption layer provided that the significant velocity overshoot occurs in the carrier collecting layer. Furthermore, a UTC-PD with a quasi-field in the absorption layer can generate a several times broader bandwidth than conventional pin PDs, while maintaining a similar internal quantum efficiency.
引用
收藏
页码:6263 / 6268
页数:6
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