Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's

被引：20

作者：

Busani, M ^{[1
]}

Menozzi, R

Borgarino, M

Fantini, F

机构：

[1] Univ Parma, Dipartimento Ingn Informat, I-43100 Parma, Italy

[2] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 4, France

[3] Univ Modena, Dipartimento Sci Ingn, I-41100 Modena, Italy

[4] Univ Modena, INFM, I-41100 Modena, Italy

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2000年 / 23卷 / 02期

关键词：

component thermal characterization; GaAs; heterojunction bipolar transistor; junction temperature prediction; microwave device; semiconductor device modeling; thermal performance; transient analysis;

D O I：

10.1109/6144.846774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we show a method for the thermal dynamic modeling of packaged HBT's, The method employs a calibration step featuring pulsed measurements at different temperatures, and is based upon a 3-stage thermal resistance-capacitance model that describes the chip-solder-case system. A current pulse generator was designed and assembled in-house for pulsed characterization down to the microsecond range. The model was used to simulate the thermal transients of the collector current from the microsecond range to hundreds of seconds, for several different bias points in the forward active region, consistently showing a good match with the measured characteristics.

引用

页码：352 / 359

页数：8

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