High frequency CV characteristics of plasma oxidised silicon carbide

被引：8

作者：

Chappel, DC ^{[1
]}

Smith, JP ^{[1
]}

Taylor, S ^{[1
]}

Eccleston, W ^{[1
]}

Das, MK ^{[1
]}

Cooper, JA ^{[1
]}

Melloch, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT & COMP ENGN,W LAFAYETTE,IN 47907

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 01期

关键词：

silicon carbide; MOS capacitors;

D O I：

10.1049/el:19970055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxides have successlally been grown on 4H-silicon carbide substrates by low temperature (<300 degrees C) plasma oxidation. HFCV measurements on MOS capacitors show the devices to be stable, and capable of accumulation, depletion and inversion. The devices have a D-it of 2 x 10(11)eV(-1)cm(-2), a Q(f) of 1.05 x 10(12)cm(-2) and show negligible slow trapping effects.

引用

页码：97 / 98

页数：2

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