Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates

被引：142

作者：

Chen, Jianyi ^{[1
]}

Guo, Yunlong ^{[1
]}

Jiang, Lili ^{[2
]}

Xu, Zhiping ^{[3
,4
]}

Huang, Liping ^{[1
]}

Xue, Yunzhou ^{[1
]}

Geng, Dechao ^{[1
]}

Wu, Bin ^{[1
]}

Hu, Wenping ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China

[4] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 09期

基金：

中国国家自然科学基金;

关键词：

WALLED CARBON NANOTUBES; CATALYST-FREE GROWTH; GRAIN-BOUNDARIES; EPITAXIAL-GROWTH; FILMS; NITRIDE; TRANSISTORS; MECHANISM; SAPPHIRE; FLAKES;

D O I：

10.1002/adma.201304872

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 mu m. The carrier mobility can reach about 5650 cm(2) V-1 s(-1), which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.

引用

页码：1348 / 1353

页数：6

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