Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy

被引：30

作者：

Lin, RM ^{[1
]}

Tang, SF ^{[1
]}

Lee, SC ^{[1
]}

Kuan, CH ^{[1
]}

Chen, GS ^{[1
]}

Sun, TP ^{[1
]}

Wu, JC ^{[1
]}

机构：

[1] CHUNG SHAN INST SCI & TECHNOL,MAT RES & DEV CTR,LUNGTAN,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 02期

关键词：

D O I：

10.1109/16.557708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated, The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 Omega-cm(2) at room temperature and as high as 1.3 M Omega-cm(2) at 77 K, At 77 K, the diode exhibits a breakdown voltage exceeding 13 V, When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 x 10(10) cm-Hz(1/2)/W at room temperature and 8.1 x 10(11) cm-Hz(1/2)/W at 77 K, To our knowledge, this is the best data for a room temperature infrared detector.

引用

页码：209 / 213

页数：5

共 10 条

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