Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy

被引:30
作者
Lin, RM [1 ]
Tang, SF [1 ]
Lee, SC [1 ]
Kuan, CH [1 ]
Chen, GS [1 ]
Sun, TP [1 ]
Wu, JC [1 ]
机构
[1] CHUNG SHAN INST SCI & TECHNOL,MAT RES & DEV CTR,LUNGTAN,TAIWAN
关键词
D O I
10.1109/16.557708
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated, The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 Omega-cm(2) at room temperature and as high as 1.3 M Omega-cm(2) at 77 K, At 77 K, the diode exhibits a breakdown voltage exceeding 13 V, When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 x 10(10) cm-Hz(1/2)/W at room temperature and 8.1 x 10(11) cm-Hz(1/2)/W at 77 K, To our knowledge, this is the best data for a room temperature infrared detector.
引用
收藏
页码:209 / 213
页数:5
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