The effects of layering in ferroelectric Si-doped HfO2 thin films

被引：57

作者：

Lomenzo, Patrick D. ^{[1
]}

Takmeel, Qanit ^{[2
]}

Zhou, Chuanzhen ^{[3
]}

Liu, Yang ^{[3
]}

Fancher, Chris M. ^{[3
]}

Jones, Jacob L. ^{[3
]}

Moghaddam, Saeed ^{[2
]}

Nishida, Toshikazu ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27696 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 07期

关键词：

ATOMIC LAYER; CAPACITORS; ENDURANCE; TIN;

D O I：

10.1063/1.4893738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution. (C) 2014 AIP Publishing LLC.

引用

页数：5

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