Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates

被引：77

作者：

Takagaki, Y ^{[1
]}

Santos, PV ^{[1
]}

Wiebicke, E ^{[1
]}

Brandt, O ^{[1
]}

Schönherr, HP ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1509471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the operation of surface-acoustic-wave (SAW) transducers fabricated on AlN/SiC structures at frequencies as high as 19 GHz. The high SAW velocity of the AlN film is enhanced by the even higher sound velocity of the SiC substrate, enabling us to achieve these frequencies with a SAW wavelength of 400 nm. (C) 2002 American Institute of Physics.

引用

页码：2538 / 2540

页数：3

共 11 条

[1] Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy [J].

Brandt, O ;

Muralidharan, R ;

Waltereit, P ;

Thamm, A ;

Trampert, A ;

von Kiedrowski, H ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :4019-4021

[2] Visible-blind photoresponse of GaN-based surface acoustic wave oscillator [J].

Ciplys, D ;

Rimeika, R ;

Shur, MS ;

Rumyantsev, S ;

Gaska, R ;

Sereika, A ;

Yang, J ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :2020-2022

[3] Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements [J].

Deger, C ;

Born, E ;

Angerer, H ;

Ambacher, O ;

Stutzmann, M ;

Hornsteiner, J ;

Riha, E ;

Fischerauer, G .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2400-2402

[4] Resonant guided elastic waves in an adsorbed bilayer: Theoretical analysis of the density of states [J].

ElBoudouti, EH ;

DjafariRouhani, B ;

Akjouj, A .

PHYSICAL REVIEW B, 1997, 55 (07) :4442-4448

[5]

Khan A, 1999, PHYS STATUS SOLIDI B, V216, P477, DOI 10.1002/(SICI)1521-3951(199911)216:1<477::AID-PSSB477>3.0.CO

[6]

2-0

[7] Study on surface acoustic wave characteristics of SiO2/interdigital-transducer/ZnO/diamond structure and fabrication of 2.5 GHz narrow band filter [J].

Nakahata, H ;

Kitabayashi, H ;

Uemura, T ;

Hachigo, A ;

Higaki, K ;

Fujii, S ;

Seki, Y ;

Yoshida, K ;

Shikata, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (5B) :2918-2922

[8] HIGH-FREQUENCY SURFACE-ACOUSTIC-WAVE FILTER USING ZNO/DIAMOND/SI STRUCTURE [J].

NAKAHATA, H ;

HIGAKI, K ;

HACHIGO, A ;

SHIKATA, S ;

FUJIMORI, N ;

TAKAHASHI, Y ;

KAJIHARA, T ;

YAMAMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :324-328

[9] PREPARATION OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTERING AND THEIR APPLICATIONS TO GHZ-BAND SURFACE-ACOUSTIC-WAVE DEVICES [J].

OKANO, H ;

TANAKA, N ;

TAKAHASHI, Y ;

TANAKA, T ;

SHIBATA, K ;

NAKANO, S .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :166-168

[10] NANOMETER ELECTRODE FABRICATION TECHNOLOGY USING ANODIC-OXIDATION RESIST AND APPLICATION TO UNIDIRECTIONAL SURFACE-ACOUSTIC-WAVE TRANSDUCERS [J].

YAMANOUCHI, K ;

MEGURO, T ;

WAGATSUMA, Y ;

ODAGAWA, H ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (5B) :3018-3020

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